dmn63d8lw document number: ds 38031 rev. 1 - 2 1 of 6 www.diodes.com august 2015 ? diodes incorporated dmn63d8lw new product new product n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25 c 3 0v 2 .8 ? @ v gs = 10 v 380 m a 3 .8 ? @ v gs = 5v 330 m a description this mosfet is designed to minimize the on - state resistance (r ds (on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor c ontrol ? power management functions ? backlighting features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 1 kv ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 3 23 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin a nnealed over alloy 42 l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 00 6 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmn63d8lw - 7 sot 3 23 3000/tape & reel dmn63d8lw - 13 sot 3 23 100 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information date code key year 2014 2015 2016 2017 201 8 201 9 202 0 20 21 20 22 20 23 20 24 20 25 code b c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot 3 23 t op view esd protected up to 1 kv t op view equivalent circuit mxx= product type marking code ym = date code marking y or y = year (ex: b = 20 14 ) m = month (ex: 9 = september) d g s e3 d s g g ate protection diode
dmn63d8lw document number: ds 38031 rev. 1 - 2 2 of 6 www.diodes.com august 2015 ? diodes incorporated dmn63d8lw new product new product maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 3 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 380 300 m a t<5s t a = + 25 c t a = + 70 c i d 430 340 m a pulsed drain current (10 s p ulse, d uty c ycle = 1%) ( note 6 ) i dm 1.2 a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 300 m w thermal resistance, junction to ambient (note 5 ) steady state r ja 426 c/w total power dissipation (note 6 ) p d 420 m w thermal resistance, junction to ambient (note 6 ) steady state r ja 301 c/w operating and storage temperature range t j, t stg - 55 to + 15 0 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 3 0 ? ? gs = 0v, i d = 250 ? dss ? ? ds = 3 0v, v gs = 0v gate - source leakage i gss ? ? ? gs = 20v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 0.8 ? ds = v gs , i d = 250 ? ds (on) ? ? ? gs = 10 .0v, i d = 250m a ? ? gs = 5 .0v, i d = 250m a ? ? ? gs = 4.5 v, i d = 250m a ? ? ? gs = 4.0 v, i d = 250m a ? ? ? gs = 2.5 v, i d = 10m a forward transconductance g fs 80 ? ? ds = 10v, i d = 0.115a diode forward voltage v sd ? ? ? gs = 0v, i s = 1 15 ma dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge v gs = 10 v q g ? ? gs = 10 v, v ds = 3 0 v, i d = 1 50m a total gate charge v gs = 4.5 v q g ? ? ? ? gs ? ? gd ? ? d( on ) ? ? dd = 30v, i d = 0.115a, v gen = 10v , r gen = 25 ? r ? ? d( off ) ? ? ? ? f ? ? ? ? notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout . 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dmn63d8lw document number: ds 38031 rev. 1 - 2 3 of 6 www.diodes.com august 2015 ? diodes incorporated dmn63d8lw new product new product 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =2.0v v gs =2.5v v gs =3.0v v gs =4.0v v gs =4.5v v gs =5.0v v gs =10v 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 7 8 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v 125 150 85 25 - 55 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =250ma 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =10v v gs =4.0v v gs =4.5v v gs =5.0v v gs =2.5v 0 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs =10v, i d =250ma v gs =4.5v, i d =250ma 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = 4.5v 25 - 55 85 125 150
dmn63d8lw document number: ds 38031 rev. 1 - 2 4 of 6 www.diodes.com august 2015 ? diodes incorporated dmn63d8lw new product new product 0.001 0.01 0.1 1 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs =10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w = 100 s 0 1 2 3 4 5 6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs =4.5v, i d =250ma v gs =10v, i d =250ma 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 1 10 100 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t j = - 55 v gs =0v, t j =25 v gs =0v, t j =85 v gs =0v, t j =125 v gs =0v, t j =150 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v gs (v) q g (nc) figure 11. gate charge v ds =30v, i d =150ma
dmn63d8lw document number: ds 38031 rev. 1 - 2 5 of 6 www.diodes.com august 2015 ? diodes incorporated dmn63d8lw new product new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. sot323 dim min max typ a1 0.00 0.10 0.05 a2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 d 1.80 2.20 2.15 e 2.00 2.20 2.10 e1 1.15 1.35 1.30 e 0.650 bsc e1 1.20 1.40 1.30 f 0.375 0.475 0.425 l 0.25 0.40 0.30 a 8 all dimensions in mm 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =421 a e1 e f e1 b l c e a2 a1 d
dmn63d8lw document number: ds 38031 rev. 1 - 2 6 of 6 www.diodes.com august 2015 ? diodes incorporated dmn63d8lw new product new product suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version . important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com dimensions value (in mm) c 0.650 g 1.300 x 0.470 y 0.600 y1 2.500 y1 g y x c
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